Structure and Formation Method of Semiconductor Device Structure with Gate Stack

ABSTRACT

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a gate electrode over the semiconductor substrate. The semiconductor device structure also includes a source/drain structure adjacent to the gate electrode. The semiconductor device structure further includes a spacer element over a sidewall of the gate electrode, and the spacer element has an upper portion having a first exterior surface and a lower portion having a second exterior surface. Lateral distances between the first exterior surface and the sidewall of the gate electrode are substantially the same. Lateral distances between the second exterior surface and the sidewall of the gate electrode increase along a direction from a top of the lower portion towards the semiconductor substrate.

PRIORITY CLAIM AND CROSS-REFERENCE

This Application is a continuation of U.S. application Ser. No.14/801,447, filed on Jul. 16, 2015, which claims the benefit of U.S.Provisional Application No. 62/096,745, filed on Dec. 24, 2014, whichapplications are incorporated by reference herein in their entireties.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapidgrowth. Technological advances in IC materials and design have producedgenerations of ICs. Each generation has smaller and more complexcircuits than the previous generation.

In the course of IC evolution, functional density (i.e., the number ofinterconnected devices per chip area) has generally increased whilegeometric size (i.e., the smallest component (or line) that can becreated using a fabrication process) has decreased. This scaling downprocess generally provides benefits by increasing production efficiencyand lowering associated costs. However, these advances have increasedthe complexity of processing and manufacturing ICs.

Since feature sizes continue to decrease, fabrication processes continueto become more difficult to perform. Therefore, it is a challenge toform reliable semiconductor devices at smaller and smaller sizes.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1I are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Some embodiments of the disclosure are described. FIGS. 1A-1I arecross-sectional views of various stages of a process for forming asemiconductor device structure, in accordance with some embodiments.Additional operations can be provided before, during, and/or after thestages described in FIGS. 1A-1I. Some of the stages that are describedcan be replaced or eliminated for different embodiments. Additionalfeatures can be added in the semiconductor device structure. Some of thefeatures described below can be replaced or eliminated for differentembodiments.

As shown in FIG. 1A, a semiconductor substrate 100 is provided. In someembodiments, the semiconductor substrate 100 is a bulk semiconductorsubstrate, such as a semiconductor wafer. For example, the semiconductorsubstrate 100 is a silicon wafer. The semiconductor substrate 100 mayinclude silicon or other elementary semiconductor materials such asgermanium. In some other embodiments, the semiconductor substrate 100includes a compound semiconductor. The compound semiconductor mayinclude gallium arsenide, silicon carbide, indium arsenide, indiumphosphide, another suitable compound semiconductor, or a combinationthereof. In some embodiments, the semiconductor substrate 100 includes asemiconductor-on-insulator (SOI) substrate. The SOI substrate may befabricated using a separation by implantation of oxygen (SIMOX) process,a wafer bonding process, another applicable method, or a combinationthereof.

In some embodiments, isolation features (not shown) are formed in thesemiconductor substrate 100 to define and isolate various deviceelements (not shown) formed in the semiconductor substrate 100. Theisolation features include, for example, shallow trench isolation (STI)features or local oxidation of semiconductor (LOCOS) features.

Examples of the various device elements that may be formed in thesemiconductor substrate 100 include transistors, diodes, anothersuitable element, or a combination thereof. The transistors may includemetal oxide semiconductor field effect transistors (MOSFET),complementary metal oxide semiconductor (CMOS) transistors, bipolarjunction transistors (BJT), high voltage transistors, high-frequencytransistors, p-channel and/or n-channel field effect transistors(PFETs/NFETs). Various processes may be performed to form the variousdevice elements. The processes include, for example, deposition,photolithography, etching, implantation, annealing, planarization,another applicable process, or a combination thereof.

As shown in FIG. 1A, a number of gate stacks including gate stacks 108Aand 108B are formed over the semiconductor substrate 100, in accordancewith some embodiments. In some embodiments, each of the gate stacks 108Aand 108B includes a gate dielectric layer 102 and a gate electrode 104.In some embodiments, each of the gate stacks 108A and 108B includes ahard mask 106. The hard mask 106 is used to assist in the formation ofthe gate stacks 108A and 108B. In some embodiments, the hard mask 106 ismade of silicon oxide, silicon nitride, silicon oxynitride, siliconcarbide, silicon carbon nitride, another suitable material, or acombination thereof. In some embodiments, the hard mask 106 has amulti-layer structure. There are recesses 200 between the gate stacks,as shown in FIG. 1A. In some embodiments, the recesses 200 are trenches.Since feature sizes continue to decrease, the width of each of therecesses 200 is getting smaller and smaller.

In some embodiments, the gate dielectric layer 102 is made of siliconoxide, silicon nitride, silicon oxynitride, dielectric material withhigh dielectric constant (high-K), another suitable dielectric material,or a combination thereof. Examples of high-K dielectric materialsinclude hafnium oxide, zirconium oxide, aluminum oxide, hafniumdioxide-alumina alloy, hafnium silicon oxide, hafnium siliconoxynitride, hafnium tantalum oxide, hafnium titanium oxide, hafniumzirconium oxide, another suitable high-K material, or a combinationthereof. In some embodiments, the gate dielectric layer 102 is a dummygate dielectric layer which will be removed in a subsequent process. Thedummy gate dielectric layer is, for example, a silicon oxide layer.

In some embodiments, the gate electrode 104 includes polysilicon, ametal material, another suitable conductive material, or a combinationthereof. In some embodiments, the gate electrode 104 is a dummy gateelectrode layer and will be replaced with another conductive materialsuch as a metal material. The dummy gate electrode layer is made of, forexample, polysilicon.

In some embodiments, a gate dielectric material and a gate electrodelayer are deposited over the semiconductor substrate 100. In someembodiments, the gate dielectric material and the gate electrode layerare sequentially deposited by using suitable deposition methods. Thesuitable deposition methods may include a chemical vapor deposition(CVD) process, an atomic layer deposition (ALD) process, a thermaloxidation process, a physical vapor deposition (PVD) process, anotherapplicable process, or a combination thereof. Afterwards, with theassistance of the hard mask 106, the gate dielectric material and thegate electrode layer are patterned to form the gate stacks including thegate stacks 108A and 108B. In some embodiments, an interfacial layer isformed between the gate dielectric layer and the semiconductorsubstrate.

Afterwards, sealing elements 110 are formed over sidewalls of the gatestack 108A and 108B, as shown in FIG. 1A in accordance with someembodiments. In some embodiments, the sealing elements 110 are in directcontact with sidewalls 105 of the gate electrodes 104. The sealingelements 110 may be used to protect the gate electrodes 104 from damagewhile subsequent process operations are performed. The sealing elements110 may also be used as a mask during a subsequent ion implantationoperation.

In some embodiments, the sealing elements 110 are made of a dielectricmaterial. The dielectric material may include silicon oxide, siliconoxynitride, silicon nitride, another suitable material, or a combinationthereof. In some embodiments, a sealing material layer is deposited overthe gate stacks 108A and 108B and the semiconductor substrate 100. Thesealing material layer may be deposited using a CVD process, an ALDprocess, an oxidation process, a spin-on process, another applicableprocess, or a combination thereof. Afterwards, an etching process, suchas a dry etching process, is performed to partially remove the sealingmaterial layer. The remaining portions of the sealing material layer onthe opposite sidewalls of the gate stacks 108A and 108B form the sealingelements 110, as shown in FIG. 1A.

In some embodiments, one or more ion implantation operations areperformed to form light doped source and drain (LDS/D) regions (notshown) on opposite sides of the gate stacks 108A and 108B in thesemiconductor substrate 100. Many variations and/or modifications can bemade to embodiments of the disclosure. In some embodiments, the LDS/Dregions are not formed. In some embodiments, the sealing elements 110are not formed.

As shown in FIG. 1B, spacer elements 112 are formed over the sealingelements 110, in accordance with some embodiments. The spacer elements112 may be used to protect the gate electrodes 104 from damage duringsubsequent process operations. The spacer elements 112 may also be usedas a mask during a subsequent ion implantation operation. In someembodiments, each of the spacer elements 112 includes multiplesub-layers. These sub-layers may be made of the same material.Alternatively, some of the sub-layers may be made of differentmaterials.

In some embodiments, the spacer elements 112 are made of a dielectricmaterial. The dielectric material may include silicon nitride, siliconoxynitride, silicon oxide, another suitable material, or a combinationthereof. In some embodiments, a spacer material layer is deposited overthe gate stacks 108A and 108B, the sealing elements 110, and thesemiconductor substrate 100. The spacer material layer may be depositedusing a CVD process, an ALD process, a spin-on process, anotherapplicable process, or a combination thereof. Afterwards, an etchingprocess, such as a dry etching process, is performed to partially removethe spacer material layer. The remaining portions of the spacer materiallayer on the sealing elements 110 form the spacer elements 112, as shownin FIG. 1B.

As shown in FIG. 1C, one or more ion implantation operations 113 areperformed to form doped regions 114 in the semiconductor substrate 100,in accordance with some embodiments. The doped regions 114 may allow asubsequent recess formation process to be performed more easily. In someembodiments, dopants including arsenic (As) and/or another suitabledopant are implanted into the semiconductor substrate 100 to form thedoped regions 114. The gate stacks 108A and 108B and the spacer elements112 together serve as an implantation mask during the implantationprocess for forming the doped regions 114.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the doped regions 114 are not formed.In some other embodiments, both the doped regions 114 and the spacerelements 112 are not formed. In some other embodiments, the dopedregions 114 are not formed, and the spacer elements 112 are formed.

As shown in FIG. 1D, a spacer layer 116 is deposited over thesemiconductor substrate 100, the spacer elements 112, and the gatestacks 108A and 108B, in accordance with some embodiments. In someembodiments, the spacer layer 116 is made of a dielectric material. Thedielectric material may include silicon nitride, silicon oxynitride,silicon carbide, silicon carbon nitride, silicon oxide, another suitablematerial, or a combination thereof. In some embodiments, the spacerlayer 116 is deposited using a CVD process, an ALD process, a spin-onprocess, another applicable process, or a combination thereof.

As shown in FIG. 1D, a protection material 115 is formed over theportions of the spacer layer 116 on bottoms of the recesses 200, inaccordance with some embodiments. The protection material 115 may beused to control a subsequent patterning process of the spacer layer 116.In some embodiments, the protection material 115 is made of acarbon-containing layer. In some embodiments, the protection layer 115is a remaining portion of an anti-reflection coating layer that ispreviously formed over the structure shown in FIG. 1D.

In some embodiments, an anti-reflection coating layer (a backsideanti-reflection coating, BARC) and a patterned photoresist layer areformed over the semiconductor substrate 100 and the gate stacks. Thepatterned photoresist layer has one or more openings that expose theportions where subsequent processes will be performed. The otherportions covered by the patterned photoresist layer are thereforeprotected. For example, the portions where n-type doped regions will beformed are covered, and the portions where p-type doped regions will beformed are not covered by the patterned photoresist layer. Theanti-reflection coating layer under the photoresist layer may be used toassist in the photolithography process for patterning the photoresistlayer. The anti-reflection coating layer may be a carbon-containinglayer, such as a polymer layer or an inorganic layer that containscarbon.

In some embodiments, an etching process is performed afterwards toremove the portions of the anti-reflection coating layer exposed by theopenings of the patterned photoresist layer. Therefore, subsequentprocesses can be performed on the exposed portions after theanti-reflection coating layer is partially removed. In some embodiments,the etching process is a plasma etching process which involves excitinga gas mixture to generate plasma for etching. In some embodiments, thegas mixture includes oxygen gas and hydrogen bromide gas. In someembodiments, the amount of the hydrogen bromide gas is modified suchthat the etching rate of the anti-reflection coating layer is retarded.For example, the amount of hydrogen bromide gas may be increased. As aresult, after the etching process, the remaining portions of theanti-reflection coating layer on the bottoms of the recesses 200 formthe protection material 115, as shown in FIG. 1D in accordance with someembodiments.

However, it should be appreciated that many variations and/ormodifications can be made to embodiments of the disclosure. Theformation method of the protection material 115 is not limited to theabove-mentioned methods. In some other embodiments, the protection layer115 is directly formed over the bottoms of the recesses 200 using a CVDprocess, a spin-on process, another applicable process, or a combinationthereof. The protection material 115 is not limited to acarbon-containing material. In some other embodiments, the protectionmaterial 115 is made of silicon oxide, silicon oxynitride, siliconcarbide, silicon carbon nitride, silicon nitride, another suitablematerial, or a combination thereof.

Afterwards, an etching process is performed to partially remove thespacer layer 116, as shown in FIG. 1E in accordance with someembodiments. The remaining portions of the spacer layer 116 over thespacer elements 112 form the spacer elements 116′, as shown in FIG. 1E.Each of the spacer elements 116′ includes an upper portion 117U and alower portion 117L. In some embodiments, due to the protection material115, the etching rate of the portions of the spacer layer 116 near thebottoms of the recesses 200 between the gate stacks is retarded. Morematerial is remaining near the bottom of the recesses 200 such that thelower portion 117L has a protruding footing feature 202 and is widerthan the upper portion 117U. The protection material 115 may be removedwhile the spacer layer 116 is etched to form the spacer elements 116′.

However, it should be appreciated that many variations and/ormodifications can be made to embodiments of the disclosure. In someother embodiments, the protection material 115 is not formed. In someembodiments, the conditions of the etching process are fine-tuned suchthat the spacer elements 116′ having the desired profile such as thatshown in FIG. 1E are formed. For example, the compositions of theetchants are tuned.

As shown in FIG. 1E, the upper portion 117U and the lower portion 117Lhave an exterior surface 119 a and an exterior surface 119 b,respectively. In some embodiments, the exterior surface 119 b of thelower portion 117L connects to the exterior surface 119 a of the upperportion 117U. In some embodiments, the exterior surface 119 a of theupper portion 117U is substantially parallel to the sidewall 105 of thegate electrode 104. In some embodiments, lateral distances between theexterior surface 119 a of the upper portion 117U and the sidewall 105 ofthe gate electrode 104 are substantially the same. For example, thelateral distances are substantially equal to the distance D1, as shownin FIG. 1E. In some embodiments, the distance D1 is a maximum lateraldistance between the upper portion 117U of the spacer elements 116′ andthe sidewall 105 of the gate electrode 104. In some embodiments, thedistance D1 is in a range from about 1 nm to about 20 nm. In some otherembodiments, the distance D1 is in a range from about 2 nm to about 10nm.

In some embodiments, the exterior surface 119 b of the lower portion117L is a curved surface. In some embodiments, the exterior surface 119b curves inward, as shown in FIG. 1E. In some embodiments, lateraldistances between the exterior surface 119 b of the lower portion 117Lof the spacer element 116′ and the sidewall 105 of the gate electrode104 increase along a direction from the top of the lower portion 117Ltowards the semiconductor substrate 100. In some embodiments, thelateral distances between the exterior surface 119 b of the lowerportion 117L and the sidewall 105 gradually increase along the directionfrom the top of the lower portion 117L towards the semiconductorsubstrate 100. For example, the lateral distances gradually increasefrom the distance D2 to the distance D3, as shown in FIG. 1E. In someembodiments, the distance D2 is equal to the distance D1. In someembodiments, the distance D2 is a lateral distance between a top of thelower portion 117L of the spacer elements 116′ and the sidewall 105 ofthe gate electrode 104. In some embodiments, the distance D3 is alateral distance between a bottom of the lower portion 117L of thespacer elements 116′ and the sidewall 105 of the gate electrode 104. Insome embodiments, the distance D2 is in a range from about 1 nm to about20 nm. In some other embodiments, the distance D2 is in a range fromabout 2 nm to about 10 nm. In some embodiments, the distance D3 is in arange from about 2 nm to about 30 nm. In some embodiments, the distanceD3 is in a range from about 5 nm to about 15 nm.

In some embodiments, a ratio of one of the lateral distances between theexterior surface 119 b and the sidewall 105 to a lateral distancebetween the exterior surface 119 a and the sidewall 105 is in a rangefrom about 1.2 to about 2. In some embodiments, the ratio of thedistance D3 to the distance D1 is in a range from about 1.2 to about 2.

In some embodiments, the thicknesses of the upper portion 117U aresubstantially the same, as shown in FIG. 1E. For example, the upperportion 117U of the spacer element 116′ has a thickness t1. In someembodiments, the thickness of the lower portion 117L of the spacerelement 116′ is not uniform. In some embodiments, the thicknesses of thelower portion 117L increase along a direction from the top of the lowerportion 117L towards the semiconductor substrate 100. In someembodiments, the thicknesses of the lower portion 117L graduallyincrease along a direction from the top of the lower portion 117Ltowards the semiconductor substrate 100. For example, the thicknessgradually increases to a thickness t3 from a thickness t2. The thicknesst3 gradually increases to a thickness t4, as shown in FIG. 1E inaccordance with some embodiments. In some embodiments, the thickness t4is greater than the thickness t1 by about 1 nm to about 3 nm. In someembodiments, the thickness t3 is substantially equal to the averagevalue of the thicknesses t2 and t4. In some embodiments, the thicknesst3 is the thickness of a middle portion of the lower portion 117L.

In some embodiments, the top of the lower portion 117L is as high as aheight h of the gate electrode 104, and the height h is half of thetotal height H of the gate electrode 104. In some other embodiments, aratio of the height h to the total height H of the gate electrode 104(h/H) is in a range from about ⅛ to about ⅝. As shown in FIG. 1E, anangle θ is formed between the bottom of the spacer element 116′ (or theprotruding footing feature 202) and the exterior surface 119 b. In someembodiments, the angle θ is in a range from about 1 degree to about 85degrees. In some other embodiments, the angle θ is in a range from about10 degrees to about 60 degrees.

As shown in FIG. 1E, after the spacer elements 116′ are formed, each ofthe recesses 200 now has a bottom width W2 that is smaller than a topwidth W1. The bottom width W2 of the recess 200 is smaller because ofthe occupation of the lower portion 117L of the spacer element 116′. Theprotruding footing feature 202 covers a portion of the semiconductorsubstrate 100. Therefore, the bottom width W2 of the recess 200 issmaller. A subsequent recess formation process may be well-controlleddue to the protruding footing feature 202. Meanwhile, the top width W1of recess 200 remains large since the upper portion 117U of the spacerelement 116′ does not occupy too much space of the recess 200.Therefore, a subsequent dielectric material filling process may still beperformed smoothly.

As shown in FIG. 1F, a portion of the semiconductor substrate 100 isremoved to form recesses 118, in accordance with some embodiments. Insome embodiments, one or more etching processes are performed to formthe recesses 118. The spacer elements 116′ may serve as an etching maskduring the formation of the recesses 118. In some embodiments, thedopants in the doped regions 114 may react with the etchants in theetching processes. The profiles of the recesses 118 may therefore becontrolled.

As shown in FIG. 1F, each of the recesses 118 laterally extends underthe spacer element 116′. The region under the gate electrode 104 andbetween edges of the recesses 118 forms a channel region that has achannel length L. Because of the occupation of the lower portion 117L ofthe spacer element 116′ (or the protruding footing feature 202), thebottom width of the recess 200 is shrunk. Therefore, the lateralextending degrees of the recesses 118 are limited since some of theetchants are blocked by the protruding footing feature 202. As a result,the channel region may have a sufficient channel length L, which greatlyimproves the device performance. In some other cases where the spacerelement does not have the protruding footing feature, the channel regionmay accordingly have a shorter length. The performance may not as goodas that of the device structure in accordance with some embodiments ofthe disclosure.

As shown in FIG. 1G, source/drain structures 120 are formed in therecesses 118 and over the semiconductor substrate 100, in accordancewith some embodiments. In some embodiments, the protruding footingfeatures 202 of the spacer elements 116′ cover a portion of thesource/drain structures 120, as shown in FIG. 1G. In some embodiments,the tops of the source/drain structures 120 are substantially coplanarwith the top of the semiconductor substrate 100. However, embodiments ofthe disclosure are not limited thereto. In some other embodiments, thesource/drain structures 120 are raised source/drain structures andprotrude from the top of the semiconductor substrate 100. In someembodiments, the semiconductor substrate 100 shown in FIG. 1G is a finstructure. In these cases, the source/drain structures 120 serve as asource/drain region of a FinFET transistor.

In some embodiments, the source/drain structures 120 are formed using aselective epitaxial growth (SEG) process, a CVD process (e.g., avapor-phase epitaxy (VPE) process, a low pressure chemical vapordeposition (LPCVD) process, and/or an ultra-high vacuum CVD (UHV-CVD)process), a molecular beam epitaxy process, another applicable process,or a combination thereof.

In some embodiments, the source/drain structures 120 are doped with oneor more suitable dopants. For example, the source/drain structures 120are SiGe source/drain features doped with boron (B) or another suitabledopant. Alternatively, in some other embodiments, the source/drainstructures 120 are Si source/drain features doped with phosphor (P),antimony (Sb), or another suitable dopant.

In some embodiments, the source/drain structures 120 are doped in-situduring their epitaxial growth. In some other embodiments, thesource/drain structures 120 are not doped during the growth of thesource/drain structures 120. Instead, after the formation of thesource/drain structures 120, the source/drain structures 120 are dopedin a subsequent process. In some embodiments, the doping is achieved byusing an ion implantation process, a plasma immersion ion implantationprocess, a gas and/or solid source diffusion process, another applicableprocess, or a combination thereof. In some embodiments, the source/drainstructures 120 are further exposed to one or more annealing processes toactivate the dopants. For example, a rapid thermal annealing process isused.

As shown in FIG. 1H, a dielectric layer 122 is formed over the spacerelements 116′, the gate stacks 108A and 108B, and the source/drainstructures 120 to fill the recesses 200, in accordance with someembodiments. The dielectric layer 122 surrounds the spacer elements 116′and the gate electrode 104. Because of the spacer element 116′ havingthe protruding footing feature 202, a channel region that has asufficient length is obtained. As mentioned above, the top width W₁ ofthe recess 200 is still wide enough to allow a good filling of thedielectric layer 122. The upper portion 117L of the spacer element 116′is thin enough such that the top width W1 of the recess 200 is stillwide enough. The filling of the dielectric layer 122 may therefore beperformed more easily.

Afterwards, a planarization process is performed to thin the dielectriclayer 122 until the gate electrodes 104 are exposed, as shown in FIG. 1Hin accordance with some embodiments. The planarization process mayinclude a chemical mechanical polishing (CMP) process, an etchingprocess, a grinding process, another applicable process, or acombination thereof. In some embodiments, the hard mask 106 is alsoremoved during the planarization process.

As mentioned above, the ratio of the distance D3 to the distance D1 isin a range from about 1.2 to about 2, in accordance with someembodiments. In some cases, if the ratio (D3/D1) is smaller than about1.2, the distance D3 may be too small. As a result, the channel length Lmay not be sufficient. Alternatively, the distance D1 may be too longsuch that the filling of the dielectric layer 122 may be difficult toperform. In some other cases, if the ratio (D3/D1) is higher than about2, the distance D3 may be too long. As a result, the lateral extendingdegree of the recesses 118 may not be enough. The source/drain structure120 may not be able to provide enough strain to increase the carriermobility.

As shown in FIG. 1I, the gate dielectric layer 102 and the gateelectrodes 104 are respectively replaced with a gate dielectric layer124 and metal gate electrodes 130A and 130B, in accordance with someembodiments. In some embodiments, the gate electrode 104 and thedielectric layer 102 are removed sequentially using one or more etchingprocesses to form recesses between the sealing elements 110.

Afterwards, the gate dielectric layer 124 is deposited over thedielectric layer 122 and the sidewalls and bottoms of the recessesbetween the sealing elements 110. In some embodiments, the gatedielectric layer 124 is a high-k dielectric layer. The high-k dielectriclayer may be made of hafnium oxide, zirconium oxide, aluminum oxide,hafnium dioxide-alumina alloy, hafnium silicon oxide, hafnium siliconoxynitride, hafnium tantalum oxide, hafnium titanium oxide, hafniumzirconium oxide, another suitable high-K material, or a combinationthereof. In some embodiments, the gate dielectric layer 124 is depositedusing an ALD process or another applicable process. In some embodiments,a high temperature annealing operation is performed to reduce oreliminate defects in the gate dielectric layer 124.

In some other embodiments, before the gate dielectric layer 124 isformed, an interfacial layer (not shown) is formed in the recessesbetween the sealing elements 110. The interfacial layer may be used toreduce stress between the gate dielectric layer 124 and thesemiconductor substrate 100. In some embodiments, the interfacial layermay be made of silicon oxide. In some embodiments, the interfacial layeris formed using an ALD process, a thermal oxidation process, anotherapplicable process, or a combination thereof.

Afterwards, a work function layer 126 is deposited over the gatedielectric layer 124, as shown FIG. 1I in accordance with someembodiments. In some embodiments, the work function layer 126 includesmultiple sub-layers. In some embodiments, these sub-layers are made ofdifferent materials. In some other embodiments, these sub-layers aremade of the same material. The work function layer 126 is used toprovide desired work function for transistors to enhance deviceperformance including improved threshold voltage. In the embodiments offorming an NMOS transistor, the work function layer 126 can be an n-typemetal layer capable of providing a work function value suitable for thedevice, such as equal to or less than about 4.5 eV. The n-type metallayer may include metal, metal carbide, metal nitride, or a combinationthereof. For example, the n-type metal layer includes titanium nitride,tantalum, tantalum nitride, other suitable materials, or a combinationthereof.

On the other hand, in the embodiments of forming a PMOS transistor, thework function layer 126 can be a p-type metal layer capable of providinga work function value suitable for the device, such as equal to orgreater than about 4.8 eV. The p-type metal layer may include metal,metal carbide, metal nitride, other suitable materials, or a combinationthereof. For example, the p-type metal includes tantalum nitride,tungsten nitride, titanium, titanium nitride, other suitable materials,or a combination thereof.

The work function layer 126 may also be made of hafnium, zirconium,titanium, tantalum, aluminum, metal carbides (e.g., hafnium carbide,zirconium carbide, titanium carbide, aluminum carbide), aluminides,ruthenium, palladium, platinum, cobalt, nickel, conductive metal oxides,or a combinations thereof. The thickness and/or the compositions of thework function layer 126 may be tuned to adjust the work function level.For example, a titanium nitride layer may be used as a p-type metallayer or an n-type metal layer, depending on the thickness and/or thecompositions of the titanium nitride layer.

In some embodiments, a barrier layer (not shown) is deposited over thegate dielectric layer 124, before the work function layer 126 isdeposited. The barrier layer may be used to interface the gatedielectric layer 124 with the work function layer 126. The barrier layermay also be used to prevent diffusion between the gate dielectric layer124 and the work function layer 126. In some embodiments, the barrierlayer is made of a metal-containing material. The metal-containingmaterial may include titanium nitride, tantalum nitride, other suitablematerials, or a combination thereof. In some embodiments, the barrierlayer includes multiple layers. In some embodiments, the barrier layeris deposited using an ALD process, a physical vapor deposition (PVD)process, a plating process, other applicable processes, or a combinationthereof. In some other embodiments, the barrier layer is not formed.

Afterwards, a metal filling layer 128 is deposited over the workfunction layer 126 to fill the recesses between the sealing elements110, as shown in FIG. 1I in accordance with some embodiments. In someembodiments, the metal filling layer 128 is made of aluminum, tungsten,copper, another suitable material, or a combination thereof. In someembodiments, the metal filling layer 128 is deposited using a PVDprocess, a plating process, a CVD process, another applicable process,or a combination thereof.

Afterwards, a planarization process is performed to remove the portionsof the gate dielectric layer 124, the work function layer 126, and themetal filling layer 128 outside of the recesses between the sealingelements 110, as shown in FIG. 1I in accordance with some embodiments.The remaining portions of the work function layer 126 and the metalfilling layer 128 together form the metal gate electrodes 130A and 130B,as shown in FIG. 1I. The planarization process may include a CMPprocess, a grinding process, an etching process, another applicableprocess, or a combination thereof.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the top of the spacer element 116 is ashigh as the tops of the metal gate electrode 130A and 130B, as shown inFIG. 1I. However, embodiments of the disclosure are not limited thereto.In some embodiments, the spacer element 116′ does not reach the top ofthe spacer element 112. In these cases, the spacer element 116′ is lowerthan the tops of the metal gate electrodes 130A and 130B.

Embodiments of the disclosure form spacer element that includes aprotruding footing feature. Due to the protruding footing feature, thechannel length under the gate electrode can be controlled according torequirements. The upper portion of the spacer element is thin and doesnot occupy too much space between gate stacks. Therefore, a subsequentdeposition of a dielectric layer between the gate stacks can beperformed smoothly. The reliability and performance of the devicestructure are improved significantly.

In accordance with some embodiments, a semiconductor device structure isprovided. The semiconductor device structure includes a semiconductorsubstrate and a gate electrode over the semiconductor substrate. Thesemiconductor device structure also includes a source/drain structureadjacent to the gate electrode. The semiconductor device structurefurther includes a spacer element over a sidewall of the gate electrode,and the spacer element has an upper portion having a first exteriorsurface and a lower portion having a second exterior surface. Lateraldistances between the first exterior surface and the sidewall of thegate electrode are substantially the same. Lateral distances between thesecond exterior surface and the sidewall of the gate electrode increasealong a direction from a top of the lower portion towards thesemiconductor substrate.

In accordance with some embodiments, a semiconductor device structure isprovided. The semiconductor device structure includes a semiconductorsubstrate and a gate electrode over the semiconductor substrate. Thesemiconductor device structure also includes a source/drain structureover the semiconductor substrate and adjacent to the gate electrode. Thesemiconductor device structure further includes a spacer element over asidewall of the gate electrode. The spacer element has a protrudingfooting feature, and the protruding footing feature covers a portion ofthe source/drain structure.

In accordance with some embodiments, a method for forming asemiconductor device structure is provided. The method includes forminga gate electrode over a semiconductor substrate and forming a spacerelement over a sidewall of the gate electrode. The spacer element has aprotruding footing feature. The method also includes forming a recess inthe semiconductor substrate, and the recess extends laterally under thespacer element. The method further includes forming a source/drainstructure in the recess.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of forming a semiconductor device, the method comprising: forming a gate electrode over a substrate; forming a spacer element over a sidewall of the gate electrode, wherein forming the spacer element comprises: forming a spacer layer over the substrate and over the gate electrode, the spacer layer having a horizontal portion extending along an upper surface of the substrate, and a vertical portion extending along the sidewall of the gate electrode; after forming the spacer layer, forming a protection material on the horizontal portion of the spacer layer, the protection material contacting the vertical portion of the spacer layer; and etching the spacer layer using an anisotropic etching process, wherein after the anisotropic etching process, the protection material is removed, and a remaining portion of the spacer layer along the sidewall of the gate electrode forms the spacer element; forming a recess in the substrate, wherein the recess extends laterally under the spacer element; and forming a source/drain structure in the recess.
 2. The method of claim 1, wherein etching the spacer layer comprises etching the spacer layer using a single anisotropic etching process.
 3. The method of claim 1, wherein the horizontal portion and the vertical portion of the spacer layer form a continuous spacer layer that extends along the upper surface of the substrate and along the sidewall of the gate electrode.
 4. The method of claim 1, wherein an upper surface of the protection material distal the substrate is closer to the substrate than an upper surface of the gate electrode distal the substrate.
 5. The method of claim 1, wherein forming the protection material comprises forming the protection material using a carbon-containing material.
 6. The method of claim 5, wherein the carbon-containing material is a carbon-containing polymer layer or a carbon-containing inorganic layer.
 7. The method of claim 1, wherein forming the protection material comprises forming the protection material using silicon oxide, silicon oxynitride, silicon carbide, silicon carbon nitride, silicon nitride, or combinations thereof.
 8. The method of claim 1, wherein the spacer element is formed to have an upper portion and a lower portion between the upper portion and the substrate, wherein the upper portion of the spacer element has a substantially uniform thickness, and a thickness of the lower portion of the spacer element gradually increases as the lower portion of the spacer element extends towards the substrate.
 9. The method of claim 8, wherein the lower portion of the spacer element has a first thickness at an interface between the upper portion and the lower portion of the spacer element, and has a second thickness at an interface between the substrate and the lower portion of the spacer element, wherein a ratio of the second thickness to the first thickness is between about 1.2 and about
 2. 10. The method of claim 1, wherein a lower surface of the spacer element closest to the substrate extends along an upper surface of the source/drain structure.
 11. The method of claim 1, wherein the source/drain structure is formed to have an upper surface that is level with the upper surface of the substrate.
 12. A method of forming a semiconductor device, the method comprising: forming a first gate structure and a second gate structure over a substrate, the second gate structure adjacent to the first gate structure; forming a spacer layer over the first gate structure, the second gate structure, and the substrate; forming a protection layer between the first gate structure and the second gate structure and on the spacer layer, wherein an upper surface of the protection layer distal the substrate is closer to the substrate than an upper surface of the first gate structure; performing an anisotropic etching process to remove portions of the spacer layer and to remove the protection layer, wherein after the anisotropic etching process, remaining portions of the spacer layer form spacer elements extending along sidewalls of the first gate structure and along sidewalls of the second gate structure, wherein each of the spacer elements has an upper portion and a lower portion, the upper portion having a substantially uniform thickness, and the low portion having a protruding footing feature; forming a recess in the substrate between the first gate structure and the second gate structure; and forming a source/drain material in the recess.
 13. The method of claim 12, wherein the protection layer is a carbon-containing material.
 14. The method of claim 12, wherein forming the protection layer comprises: forming a protection material over the first gate structure, the second gate structure, and the substrate; forming a patterned mask layer over the protection material; and performing a plasma etching process to remove portions of the protection material exposed by the patterned mask layer, wherein remaining portions of the protection material after the etching process form the protection layer.
 15. The method of claim 14, wherein the plasma etching process uses a gas mixture comprising oxygen gas and hydrogen bromide gas.
 16. The method of claim 15, further comprising adjusting an etching rate of the protection material by changing an amount of the hydrogen bromide gas in the gas mixture.
 17. The method of claim 12, wherein the recess is formed to extend laterally under the spacer elements.
 18. A semiconductor device comprising: a substrate; a gate electrode over an upper surface of the substrate; a source/drain structure adjacent to the gate electrode, wherein the source/drain structure has a first width measured at the upper surface of the substrate, a second width measured at a lower surface of the source/drain structure in the substrate, and a third width measured between the upper surface of the substrate and the lower surface of the source/drain structure, wherein the third width is larger than the first width and the second width; and a spacer element extending along a sidewall of the gate electrode from a top surface of the gate electrode to the substrate, the spacer element has an upper portion and a lower portion between the upper portion and the substrate, wherein a thickness of the upper portion of the spacer element is substantially uniform, and a thickness of the lower portion of the spacer element gradually increases as the lower portion of the spacer element extends towards the substrate.
 19. The semiconductor device of claim 18, wherein a lower surface of the spacer element extends along the upper surface of the substrate and along an upper surface of the source/drain structure.
 20. The semiconductor device of claim 18, wherein the thickness of the upper portion of the spacer element has a first value, and the thickness of the lower portion of the spacer element has a second value measured at the upper surface of the substrate, wherein a ratio between the second value and the first value is between about 1.2 and about
 2. 